新型槽栅nMOSFET热载流子效应的模拟研究

Modeling Study on Hot Carrier Effect of New Grooved Gate nMOSFET

应用二维器件仿真程序 PISCES- ,对槽栅结构和平面结构器件的特性进行了模拟比较 ,讨论了槽栅结构 MOSFET的沟道电场特征及其对热载流子效应的影响。槽栅结构对抑制短沟道效应和抗热载流子效应是十分有利的 ,而此种结构对热载流子的敏感 ,使器件的亚阈值特性。

The characterisitcs of hot carrier effect in grooved gate and planar MOSFET are simulated using classical 2-D devi ce simulator PISCES-Ⅱ. The electric field of channel in grooved gate and its i mpact on hot carrier effect are studied. The grooved gate is very favorable to s uppressing short channel effects and hot carrier effects. The characteristics of subthreshold and output vary greatly because of its sensitivity to hot carriers .