金属-半导体接触势垒高度的理论计算

Theoretical Calculation of B arrier Height of Metal-semiconductor Contacts

采用平均键能作为参考能级计算了十种金属 -半导体接触势垒高度 ,其计算结果与实验值的符合程度不亚于 Tersoff和 M o¨ nch所采用的电中性能级方法 ,计算结果表明平均键能方法和 Tersoff提出的电中性能级方法一样 ,可作为金属

Taken the average -bond-energy as the reference level,ten barrier heights of metal-semiconductor c ontacts are calculated.The coincident de gree of our calculational values and exp erimental values is not less than that o f charge-neutrality point method,adopted by Tersoff and M o¨ nc h.It shows that the average-bond-energy method,similar to Tersoff's charge-neutr ality point method,can be used as one of the methods in theoretical calculation of metal-semiconductor contacts.