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C基薄膜电子场发射的一般特性及发射模型 被引量:3

Field emission properties and field emission models of C-based films
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摘要 介绍了几种碳基材料的场发射特性及其发射模型。金刚石表面具有较低的或负的电子亲和势,因无法实现N型掺杂,难以用作电子发射材料。类金刚石膜及非晶碳膜材料经过"激活"后在表面形成具有较大场增强因子的熔坑,在几~几十V/μm的低阈值电场下得到非本征的电子发射,纳米结构的碳和碳纳米管本身具有较大的场增强因子,是较有前途的平面阴极场发射材料。碳基材料的导电性不同,遵循的发射模型不同。 The models and properties of electron field emission from various C-base films are introduced. Despite lower positive electron affinity or negative electron affinity diamond is not good for electron field emission because of no n-doped diamond. DLC films can emit electrons at lower electrical field of several 10 V/μm after 'initiation', in which cave can be formed, and the cave has high geometric enhancement factor. With intrinsic high geometric enhancement factor, nano-structure carbon or carbon nanometer tube are promising for electron field emission.
出处 《真空》 CAS 北大核心 2004年第1期16-21,共6页 Vacuum
基金 国家自然科学基金资助项目 项目号:050002002
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