摘要
介绍了AlN压电薄膜的研究现状,着重突出了AlN薄膜的制备方法、择优取向结构及表面形貌等方面的研究,尤其对脉冲激光沉积工艺(PLD)镀膜的基本原理和过程、分别釆用周期价键链(PBC)理论和断键模型对薄膜晶面择优取向机理的分析作了较为详细的探讨。最后简单讨论了AlN压电薄膜研究的发展趋势。
The present status of work on A1N piezoelectric thin films is addressed, with the emphasis put on the preparation,preferential orientation and surface morphology of A1N thin films. The principle and process of the thin film preparation by Pulsed Laser Deposition (PLD) are described, and preferential orientation mechanism is analysed through Periodic Bond Chain (PBC) theory and broken bond model separately. Then future directions are also discussed.
出处
《材料导报》
EI
CAS
CSCD
2003年第F09期210-213,共4页
Materials Reports
