Si基纳米结构的电子性质

Electronic properties of Si-based nanostructures

各种Si基纳米发光材料在Si基光电子器件及其全Si光电子集成技术中具有潜在的应用前景,从理论和实验上对其电子结构进行研究,有助于我们深化对其发光机制的认识与理解。本文主要从量子限制效应发光这一角度,着重介绍了Si纳米晶粒、Ge/Si量子点,SiO2/Si超晶格和超小尺寸Si纳米团簇等不同Si基纳米结构的电子性质以及它们与发光特性之间的关系。还讨论了介质镶嵌和表面钝化对其电子结构的影响。

Various Si-based nanocrystalline luminescent materials have potential applications in the optoelectronic devices and all-Si optoelectronic integrated technology. To deepen understanding for the luminescent mechanism,the theoretical and experimental studies of the electronic structures on these materials are very important. In this paper,we emphatically introduce the electronic properties of different Si-based nanostructures such as Si nanocrystallites,Ge/Si quantum dots,SiO2/Si superlattice and ultrasmall structural Si nanoclusters. In addition,the effect of buried mediun and surface passivation on the electronic structures are also briefly discussed.