摘要
设计了 5 0 0× 5 0 0个微加热器阵列 ,加热线条宽度分别为 5 μm ,7μm ,9μm。采用离子束溅射、光刻、湿法腐蚀等工艺 ,在Si衬底上制作了微加热器 ,加热层材料为Ni/Cr ,Au ,厚度分别为4 0 0nm ,2 0 0nm。采用直流电源对加热器进行供电 ,在红外热像仪下观察 ,随着电压、电流的增加 ,加热区温度上升很明显。测试结果表明 ,该加热器可以用于 (MEMS)
A 500×500 microheater array is designed and fabricated on silicon substrate by ion beam sputtering, photolithography, wet etching methods. The microheater materials are Ni/Cr alloy and Au with thickness of 400nm and 200nm respectively. By DC power supply, the temperature of the microheater arises quickly with the ascending of voltage and current, which suggests that the microheater could be used for MEMS wafer scale level hermetic package.
出处
《微纳电子技术》
CAS
2003年第7期249-250,共2页
Micronanoelectronic Technology