摘要
从理论上研究缓冲层的厚度和特性对多量子阱材料 (GaAs/Ga1-xAlxAs)中的共振态的影响 ,利用界面响应理论的格林函数方法 ,计算了局域和总电子态密度以及电子对结的穿透率 ,展示了缓冲层特性对态密度特征峰、穿透率的影响。结果表明 。
The effect of the thickness and barrier height of buffer layers on resonant states in a MQW is studied theoretically. The local and total density of states as well as electronic transmission rate are calculated by using Green function method in the frame work of interface response theory. We showed that effect of buffer layer on the density of states and electronic tunnelling rate are prominent.
出处
《微纳电子技术》
CAS
2003年第7期8-10,共3页
Micronanoelectronic Technology
基金
山西省自然科学基金资助 (MZ2 0 0 1110 3 )
