摘要
提出了一种能抗侧向耦合干扰的微机械硅倾角传感器的敏感结构设计 ,它由两个不同大小的质量块和连接它们的两个相互平行的硅应变梁组成。文中通过推导给出了硅应变梁上所受的应变与倾角及位置的解析关系 ,并计算了在两个不同质量块作用下硅梁上的应力分布 。
In this work, a new structure design of micromechanical inclinometer is presented. It consists of two silicon bulk masses that are connected by two parallel silicon beams. The two beams are in the same sizes and located symmetrically between the two masses, thus improving the lateral shock resistivity. The quantitative expression of stress distribution on the two beams versus tilting angle has been derived, and calculated results have been discussed. Finally, the process procedure of fabricating such a inclinometer is proposed.
出处
《微纳电子技术》
CAS
2003年第7期302-304,共3页
Micronanoelectronic Technology
基金
安徽省自然科学基金资助课题 (0 0 0 43 5 10 )