摘要
通过介绍光刻技术的演变和所面临的挑战 ,揭示下一代光刻技术的发展潜力和研究现状。通过比较几种具有较大潜力的NGL(浸没式ArF光刻机、极紫外光刻和电子束曝光 )的特点、开发现状和有待解决的关键技术 ,预言将来可能是以极紫外光刻、电子束曝光和某种常规光刻机结合的方式来实现工业、前沿科学技术需要的各种微米 /纳米级图形的制备。
The status and tendency of next generation lithography (NGL) is presented by reviewing the evolution and the challenge of optical lithography. The typical NGL technologies, like immersion ArF lithography, extreme ultraviolet lithography (EUVL) and electron beam Projection lithography (EPL), are compared. The optical lithography, EUVL and EPL may be combined and matched to meet the requirements of future industry and frontier research.
出处
《微纳电子技术》
CAS
2003年第7期116-119,125,共5页
Micronanoelectronic Technology
基金
中国科学院"引进国外杰出人才"2 0 0 1年资助项目
