SAL601负性电子束抗蚀剂纳米级集成电路加工

Nano-IC fabrication by SAL601chemical amplified negative resist

讨论了采用SAL6 0 1负性化学放大电子束抗蚀剂进行电子束曝光应用于纳米级集成电路加工的实验方法与工艺条件。经过大量实验总结 ,通过变剂量模型对电子束曝光中电子散射参数进行提取 ,应用于邻近效应校正软件 ,针对集成电路曝光图形进行邻近效应校正。校正后的曝光图形经过曝光实验确定显影时间及曝光剂量 ,最终得到重复性良好的 ,栅条线宽为

The fabrication of 70nm width resist , SAL601 chemical amplified negative resist exposed by an JEOL 5000LS EBL tool on CMOS gate, has been successfully explored. A dose varied model was used in an experiment of the electron scattering parameters determination. These parameter is applied in an EPC tool. The exposing dose and development time is determined by other experiments. The result can be got repeatedly.