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利用紫外光刻技术进行SU8胶的研究 被引量:9

The research of SU8 resist using UV lithography
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摘要 SU 8光刻胶优异的性能在MEMS技术的发展重得到了广泛的应用 ,已经成为MEMS研究中必不可少的方法之一。SU 8光刻胶能够进行厚度达毫米的结构研究工作 ,另一方面SU 8结构具有很好的侧面垂直结构 ,通过控制工艺参数 ,能够获得满意的SU 8胶结构。SU 8光刻胶已应用于LIGA技术的标准化掩模制造工艺和一些器件的研究工作。在SU8胶研究过程中 ,克服了许多技术难题 ,使得这一技术能够应用到实际的需要中。 SU8 resist is now widely applied to make the structures for the research of MEMS and has become an absolutely necessary method for the MEMS work. The SU8 resist can be used to make the structures with high thickness of 1mm, and also the structures of SU8 has very good profile with the vertical sidewall and can be easily gotten. Now SU8 resist has been used to make the LIGA mask for the LIGA standard process and some devices researching work. Some technique problems were overcome in the development of SU8, so it made the technology to meet the requirements in applications.
出处 《微纳电子技术》 CAS 2003年第7期126-128,141,共4页 Micronanoelectronic Technology
关键词 紫外光刻 SU8光刻胶 MEMS技术 微结构 MEMS SU8 microstructures microfabrication.
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参考文献4

  • 1[1]CREMERS C, BOUAMRANE F, SINGLETON L, et al. SU-8 as resist material for deep X-ray lithography [J]. Microsystem Technologies 2001,7 (1):11-16.
  • 2[2]LORENZ H, DESPONT M, VETTIGER P, et al. Fabrication of photoplastic high-aspect ratio microparts and micromolds using SU-8 UV resist [J]. Microsystem Technologies 1998,4 (3):143-146.
  • 3[3]LEE K Y, LABIANCA N, RISHTON S A, et al. Micromaching application of a high resolution ultrathick photoresist [J]. J Vac Sci Technol B,1995,13(6).
  • 4[4]DESPONT M, LORENZ H, FAHRNI N, et al. High-aspect-ratio, ultrathick, negative-tone near-UV photoresist for MEMS applications [A]. Proc of the 10th Int IEEE Workshop on Micro Electro Mechanical Systems [C]. Nagoya, Japan, 1997, 518-522.

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