摘要
提出了一种新型结构压力传感器 ,器件由上下两硅片键合而成 ,上硅片制作半岛型结构氮化硅谐振梁 ,下硅片制作矩形压力膜。应用有限元软件对器件结构及灵敏度进行了计算机模拟分析 ,器件利用MEMS技术研制并采用电热激励压阻拾振方式进行了测试。
A resonant pressure sensor of a novel structure has been developed which consists of a silicon nitride beam supported by a single crystal silicon frame of a special peninsular design, mounting on a silicon diaphragm by bonding. Numerical modeling is performed on design of diaphragm geometry and sensitivity of pressure measurement. The sensor is fabricated by MEMS technology and measured by electrothermal excitation and piezoresistor detection. Both computer simulation and experimental results show that the novel structure largely increases the pressure sensitivity.
出处
《微纳电子技术》
CAS
2003年第7期464-466,共3页
Micronanoelectronic Technology