摘要
针对传统双层多晶EEPROM的诸多不足之处 ,介绍了相对较有潜力的单层多晶的EEP ROM ,主要对比了传统的双层多晶的EEPROM和单层多晶的EEPROM (singlepolyEEPROM ) ,展示了singlepolyEEPROM的应用前景 ,同时提出了singlepolyEEPROM所面临的问题 。
EEPROM has been widely used for the control of microprocessors and logic circuits. However, traditional EEPROM requires special multipolysilicon processes and multioxidation for two thin SiO 2 layers. Many masks are needed which result in longer process turnaround time, lower yield, higher cost, and lower reliability. Single poly EEPROM has simple process, which is compatible to standard CMOS process. It is also promising for low voltage applications. In this paper, traditional double-poly EERPOM and new single poly EEPROM are contracted, some challenges which single poly EEPROM is facing are brought forward, some new devices structures of the single poly EEPROM for different application are reviewed. The application and prospect of single poly EEPROM memory devices are proposed.
出处
《微纳电子技术》
CAS
2003年第7期552-556,共5页
Micronanoelectronic Technology