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单层多晶的EEPROM 被引量:3

Single poly EEPROM
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摘要 针对传统双层多晶EEPROM的诸多不足之处 ,介绍了相对较有潜力的单层多晶的EEP ROM ,主要对比了传统的双层多晶的EEPROM和单层多晶的EEPROM (singlepolyEEPROM ) ,展示了singlepolyEEPROM的应用前景 ,同时提出了singlepolyEEPROM所面临的问题 。 EEPROM has been widely used for the control of microprocessors and logic circuits. However, traditional EEPROM requires special multipolysilicon processes and multioxidation for two thin SiO 2 layers. Many masks are needed which result in longer process turnaround time, lower yield, higher cost, and lower reliability. Single poly EEPROM has simple process, which is compatible to standard CMOS process. It is also promising for low voltage applications. In this paper, traditional double-poly EERPOM and new single poly EEPROM are contracted, some challenges which single poly EEPROM is facing are brought forward, some new devices structures of the single poly EEPROM for different application are reviewed. The application and prospect of single poly EEPROM memory devices are proposed.
出处 《微纳电子技术》 CAS 2003年第7期552-556,共5页 Micronanoelectronic Technology
关键词 EEPROM 单层多晶 CMOS工艺 三阱工艺 存储器 结构 single poly EEPROM standard CMOS processes triple well structure
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参考文献6

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同被引文献16

  • 1于宗光,许居衍,魏同立.EEPROM单元结构的变革及发展方向[J].固体电子学研究与进展,1996,16(3):233-240. 被引量:11
  • 2高大元,何碧,何松伟,董海山,李敬明.Arrhenius方法的局限性讨论[J].含能材料,2006,14(2):132-135. 被引量:33
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