摘要
介绍了GaN薄膜材料的主要性质 ,制备工艺 ,掺杂 ,衬底和缓冲层等相关问题 ,并概述了GaN基器件的研究现状 ,提出了目前GaN研究中所面临的主要问题 .
Recent studies on gallium nitride thin films were reviewed with focus on techniques mainly used in GaN thin films growth,doping,buffers and substrate materials.The electrical and optical properties of GaN and their potential applications were summarized and the recent reports of GaN-base device were also mentioned.Main problems in research of GaN materials were discussed.
出处
《山东师范大学学报（自然科学版）》
CAS
2003年第4期27-30,共4页
Journal of Shandong Normal University(Natural Science)
基金
国家自然科学基金重大研究计划资助项目 ( 90 2 0 10 2 5 )
国家自然科学基金资助项目 ( 60 0 710 0 6)联合资助
