双π型RF EMIF的一种薄膜集成制造方法

A noval fabrication method of double-p-typed RF EMIF in thin-film IC technology

基于双π型电磁干扰滤波器(EMIF)的电路结构,借鉴了集成电路超微细加工技术,提出了与等平面超大规模集成电路工艺完全兼容的双p型EMIF电路的薄膜集成制造方法。该方法可用于制作满足未来电子系统的高频化、小型化、轻型化和片式化信号处理EMIF电路的应用需求,改善双p型EMIF电路的信号处理性能,还可将其与VLSI一起片上集成。

A new fabrication method of double-p-type RF EMIF in thin-film IC technology is firstlyput forward based on the circuit structure and the superfine processing technology. It could be fullyrealized with only one metal layer and a few steps of equal-plan IC fabrication processes. Thus, thedouble-p-type RF EMIF might be integrated with ICs together on one chip. Moreover, if a designtechnique is adopted by which the parameters among double-p-type EMIF cells are graded in turns,its bandwidth might be expanded and its band-boundary-slope might be increased. By this methodthe double-p-type RF EMIF might be fabricated to satisfy the needs in miniaturized, weight lighted andsheeted high frequency applications.