摘要
研究了E类RF放大器的电路结构、工作原理、存在问题以及解决的方法──差分和交叉耦合反馈结构,最后给出了E类放大器的实例。由于具有低成本、高集成度、多功用等优点,MOS工艺在射频功率放大方面有很大的发展潜力。在本文中,用0.6μmCMOS工艺实现了E类放大器的设计。
Some aspect of Class-E RF amplifier is discussed, such as circuit structure, workingprinciple, the existent issue and the solution by the use of differential and cross coupled feedbackconfiguration. At last, an example of class-E amplifier is given. MOS is an attractive technology forRF power amplification because of its lower cost and potential for high-density and functionality.Class-E power amplifier is implemented in 0.6 μm CMOS technology.
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第2期74-76,79,共4页
Semiconductor Technology
