摘要
光束质量问题是制约半导体激光器应用的主要因素,采用出光面蒸镀低反膜LD阵列半导体激光器阵列锁相技术较好地解决了这个问题。本文设计并制作了高反膜系和极低反膜系,获得了高阈值的LD阵列。本文的低反膜系有大的带宽和小于0.2%的剩余反射率,易于工艺实现,LD阵列的阈值电流密度达到480A/cm2。
The main reason which restricts the application of semiconductor laser diode is its beamquality .The question can be well resolved by using laser diode array phase-locking in which weevaporate anti-reflecting film on the emitting side. We devised high-reflecting film(HR coating) anti-reflecting film(AR coating) and got high current density (Jth) LD Array. The AR coating we devisedhas large wave width and its reflectivity is lower than 0.2%, the technology is very simple. The Jth ofthe LD Array is high as 480 A/cm2.
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第2期77-79,共3页
Semiconductor Technology
