摘要
利用XPS、UPS等表面分析方法对Ni/Si接触的界面体系进行了研究,Ni-Si界面在室温下形成不稳定的多晶混层,其演化过程为:NiO_x/金属Ni/富Ni相/Ni-Si互混相/富Si相/Si,同样Ni-Si界面经650℃真空退火形成均匀的NiSi_2界面层,表层并有SiO_2相存在,说明硅化物的生成过程为:Ni与SiO_2接触产生金属氧化物,加热后逐步形成金属硅化物,讨论了NiSi_2的化学键形成。
The electronic properties of Ni/Si interface bad been studied by X-ray photoelec-tron spectroscopy (XPS and UPS). During the thin film reacing different phase can be produceed depending upon the temperature. At room temperature, Ni can react with Si formed numerous unstable compound. At 923 K silicon-rich silicides being formed. The chemical bond of NiSi2 is also discussed.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1992年第1期43-47,共5页
Journal of Xiamen University：Natural Science
关键词
过渡金属
硅化物
金属
半导体
界面
Transition-metal silicides, ESCA, M-S Interface
