GaAs_(1-x)Px:N中氮浓度的光吸收法测量

Determination of Nitrogen Concentration in GaAs-(1-x)P_x : N by Absorption Spectroscopy

在液氮温度下利用光吸收法测量了一组混晶材料GaAs_(1-x)P_x :(0.60<x<0.90)样品中的掺氮浓度,对其中较低组分和较小掺氮浓度的样品采用多片样品重叠增强吸收的方法,测量效果有很大改善,根据实验得到的样品组分和N_x带吸收蜂能量位置的关系式:E_(N_x)(x,77K)=(0.3095)x^2+(0.0797)x+1.9236(eV),可以简便地从吸收谱中确定样品组分。

A method for determining the nitrogen concentration in GaAs1-x Px : N (0. 60<Cx<0. 90) epitaxial layers on GaP substrates by optical absorption is described. For the samples with lower composition and lower doping level, the better results can be obtained by pilling up several pieces of the same sample. A tentative empirical formula is proposed to estimate the sample' s composition:EN,(x,77K) = (0. 309 5)x2+(0. 079 7)X+1.923 6(eV).