掺钾PZN基陶瓷的有序微区及介电和电致应变性能研究

The effect of K+-doping on the ordered micro-region, dielectric and electrostrictive properties of 0. 80Pb(Zn1/3Nb2/3)O3-based ceramics

使用二次合成法制备了不同钾含量的0.85Pb(Zn1/3Nb2/3)O3-0.10BaTiO3-0.05PbTiO3陶瓷。首先研究了掺钾对PZN基预烧粉体和陶瓷相组成的影响。在此基础上详细研究了掺钾对PZN基陶瓷有序微区以及介电和电致应变性能的影响规律。掺钾对PZN基预烧粉体和陶瓷的相组成影响很小;理论计算和Raman散射光谱分析都表明掺钾使PZN基陶瓷的有序微区的尺寸稍微减小;掺钾也减小了PZN基陶瓷的介电和电致应变性能,并分析了掺钾降低介电和电致应变性能的原因。

0. 85Pb(Zn1/3Nb2/3)O3-0. 10BaTiO3-0. 05PbTiO3 relaxor ceramics with various content of K+ were fabricated by the colum-bite method and the effect of K+ doping on the phase structure, ordered micro-region, dielectric and electrostrictive properties was investigated in detail. Minor content of K+ doping hardly affected the phase structure of PZN-based ceramics, however, both of theoretical calculation and Raman scattering experiment demonstrated that K+ doping decreased ordered micro-region slightly, K+ doping also slightly decreased dielectric and electrostrictive properties. At last, the mechanism of K4+ doping in dielectric and electrostrictive responses was explained.