LGS晶体的化学腐蚀及缺陷分布

Chemical etching and defect distribution of langasite (La3Ga5SiO14) crystals

采用提拉法生长得到LGS单晶,采用磷酸作腐蚀剂,对LGS晶体做了一系列腐蚀实验。实验结果表明:对于不同方向晶面,腐蚀液的配比和腐蚀时间等条件各不相同。根据腐蚀坑可以判定,其极轴是二次轴[1120]方向,并可具体确定极轴方向。关于腐蚀坑的分布可以判定,在现行条件下生长的晶体具有较高的质量。

La3 Gas SiO14 crystal was grown by czochralski method. Chemical etching was carried out on the grown crystals by using H3PO4-based etchants. It was found that the proportion of etchants and the etching time varied with different facets of the sample.The pit shapes showed the two-fold [1120] axis of the crystal was the polar axis. The observation of the defects distribution revealed that the quality of the as grown LGS crystal was good.