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高性能42nm栅长CMOS器件 被引量:1

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摘要 研究了20~50nmCMOS器件结构及其关键工艺技术,采用这些创新性的工艺技术研制成功了高性能42nm栅长CMOS器件和48nm栅长的CMOS环形振荡器。在电源电压VDD为±1.5V下,NMOS和PMOS的饱和驱动电流,I∞分别为745μA/μm和-530μA/μm,相应的关态漏电流Ioff分别为3.5nA/μm和-15nA/μm。NMOS的亚阈值斜率和DIBL分别为72mV/Dec和34mV/V,PMOS的亚阈值斜率和DIBL分别为82mY/Dec和j7mV/V。栅长为48nm的CMOS57级环形振荡器,在1.5V电源电压下每级延迟为19.9ps。
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第B05期153-160,共8页 半导体学报(英文版)
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同被引文献10

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