MBE InGaAs／GaAs量子点及其红外吸收波长调制
被引量：1
摘要
利用分子束外延枝术，自组织生长了具有正入射红外吸收特性的InGaAs／GaAs量子点超晶格结构。通过改变结构参数和生长参数，可改变量子点的形状、尺寸和调制其红外吸收波长，用于研制8～12μm大气窗口的红外探测器，观测发现随着量子点超晶格结构的InGaAs层厚度增加，其红外吸收峰蓝移，用量子点间的耦合作用随In—GaAs层的厚度的增加而增强的观点对其机理给予解释。
参考文献6
-
1Leonard D,Krishnamurthy M,Reaves C M,et al.Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surface.Appl Phys Lett,1993,63:3203
-
2Pan D,Zeng Y P,Kong M Y,et al.Normal incident infrared absorption from InGaAs/GaAs quantum dot supperlattice.Electron Lett,1996,32:1726
-
3Pan D,Owe E T.Conducton intersubband InGaAa/GaAsquantum dot infrared photodetectors.Electron Lett,1998,34:1883
-
4Phillips J,Kamath K,Bhattacharya P.Far-infrared photoconductivity in self-organized InAs/GaAs quantum dots.Appl Phys Lett,1998,72:2020
-
5Kim S,Mohseni H,Erdtmann M,et al.Growth and characterization of InGaAa/InGaP quantum dots,for midinfrared photo condutive detector.Appl Phys Lett,1998,73:963
-
6Zhuang Q D,Li J M,Li H X,et al.Intraband absorption in the 8～12μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice.Appl Phys Lett,1998,73(25):3706
同被引文献12
-
1崔丽秋,江德生,张耀辉,吴文刚,刘伟,宋春英,李月霞,孙宝权,王若桢.GaAs/GaAlAs量子阱双色红外探测器的光电性质的研究[J].Journal of Semiconductors,1997,18(8):573-580. 被引量：3
-
2Tidrow M Z,Dyer W R. Infrared sensor for ballistic missile defense. Infr Phys & Tech, 2001,42: 333.
-
3Levine B F. Quantum-well infrared photodetectors. J Appl Phys,1993,74(8):R1.
-
4Urayama J,Norris T B, Singh J, et al. Observation of phonon bottleneck in quantum dot electronic relaxation. Phys Rev Lett, 2001,86:4930.
-
5Pan D, Zeng Y P, Kong M Y, et al. Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice. Electron Lett, 1996,32: 1726.
-
6Kim Eui-Tae, Madhukar Anupam, Ye Zhengmao,et al. High detectivity InAs quantum dot infrared photodetectors. Appl Phys Lett,2004,84(17):3277.
-
7Phillips Jamie. Evaluation of the fundamental properties of quantum dot infrared detectors. J Appl Phys, 2002,91(7):4590.
-
8Mazur Yu I,Ma W Q,Wang X,et al. InGaAs/GaAs three dimensionally-ordered array of quantum dots. Appl Phys Lett,2003,83:987.
-
9Ma W Q, Hussein M L, Shultz J L, et al. Enhancing the inplane spatial ordering of quantum dots. Phys Rev B, 2004,69:233312.
-
10Born M, Wolf E. Principles of optics. New York: Cambridge University Press, 1999.
-
1科信.首款有buried氧化钇层的绝缘体上InGaAs晶体管,可实现2000cm^2/V-s的有效迁移率[J].半导体信息,2015,0(4):4-4.
-
2周华.用光致发光研究低压MOCVD生长的InGaAlP层[J].发光快报,1992,13(2):54-58.
-
3严辉,陈光华,黄世平,郭伟民.SiC埋层的制备及其红外吸收特性[J].物理学报,1997,46(11):2274-2279. 被引量：6
-
4刘健,王一,郭祥,王继红,罗子江,郎啟智,赵振,周海月,丁召.多周期InGaAs量子点点阵与点链形貌研究[J].真空科学与技术学报,2016,36(12):1413-1417.
-
5冯良桓,蔡亚平,孙小松,刘军,陶德元.金属柱体粉末的红外吸收特性[J].四川大学学报（自然科学版）,1995,32(4):467-470.
-
6王银玲,李美成,李洪涛,赵连城.用于微测辐射热计的氧化钒薄膜的光电性能研究[J].功能材料,2004,35(z1):1604-1607. 被引量：2
-
7何浩,贺业全,杨再荣,罗子江,周勋,丁召.自组织InAs/GaAs与InGaAs/GaAs量子点生长及退火情况的比较[J].真空,2011,48(1):82-84.
-
8宁永强,高欣,王立军,Peter Smowton,Peter Blood.InGa As/Ga As量子点类脊型激光器的激射特性[J].中国激光,2002,29(4):293-296. 被引量：3
-
9师庆华.1.5μm斜坡掩埋异质结InGaA sP/InP激光器[J].液晶与显示,1990,10(4):62-64.
-
10无线传感网络的关键技术及趋势[J].电子设计应用,2009(1):50-52. 被引量：6
