基于SiGe／Si的空穴型共振隧穿二极管
被引量：4
摘要
用GS400高真空外延设备制备了空穴型双势垒单势阱共振隧道二极管，常温(293K)直流测试数据为PVCR(峰谷电流比)=1．13，Jp(峰值电流)=1．589kA／cm^2，对应的低温(77K)脉冲测试数据为PVCR=1．24，Jp=1．086kA／cm^2，两种情况下，较低的PVCR可归结为Ge2Si1-x／Si异质结构本身的能级特性和热效应。
参考文献8
-
1Chang L L,Esaki L,Tsu R.Resonant tunneling in semiconductor double barriers.Appl Phys Lett,1974,24:593
-
2See P,Paul D J,Holl a¨ nder B,et al.High performance Si1-x-Gex/Si resonant tunneling diodes.IEEE Electron Device Lett,2001,22(4):182
-
3Eberla K,Duschla R,Schmidta O G,et al.Si-based resonant inter and intraband tunneling diodes.J Cryst Growth,2001,227/228:770
-
4Han P,Sakuraba M.Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD.J Cryst Growth,2000,209:315
-
5Ismail K,Meyerson B S,Wang P J.Electron resonant tunneling in Si/SiGe double barrier diodes.Appl Phys Lett,1991,59:973
-
6People R,Bean J C.Calculation of critical layer thickness versus lattice mismatch for GexSi1-x strained-layer heterostructures.IEEE J Electron,1986,QE-22(9):1696
-
7Dismukes J P,Ekstrom L,Steigmeier E F,et al.Thermal and electrical properties of heavily doped Ge-Si alloys up to 1300K.J Appl Phys,1964,35:2889
-
8Dehlingera G,Gennsera U.Investigation of the emitter structure in SiGe/Si resonant tunneling structures.Thin Solid Films,2000,369:390
同被引文献23
-
1宋爱民,郑厚植,杨富华,李月霞,李承芳.利用双势垒结构研究磁场下二维电子的态密度[J].红外与毫米波学报,1994,13(3):165-172. 被引量：2
-
2赵可沦,房丽敏.双势垒系统伏安特性的数值模拟[J].辽宁大学学报（自然科学版）,2005,32(2):118-120. 被引量：1
-
3王明泉.双势垒结构散射问题的路径积分方法[J].黄淮学刊（自然科学版）,1995,11(2):16-19. 被引量：3
-
4Chang L L, Esaki L, Tsu R. Resonant tunneling in semiconductor double barriers [J]. Appl Phys Lett, 1974,24(12) : 593- 595.
-
5S6derstrom J R, Brown E R, Parker C D, et al. Growth and characterization of high current density, high-speed InAs/AISb resonant tunneling diodes [J]. Appl Phys Lett,1991, 58(3) : 275 - 277.
-
6Broekaert T P E, Fonstad C G. Ino.s3Gao. 47As/AIAs resonant tunneling diodes with peak current densities in excess of 450kA/cm2 [J]. J Appl Phys, 1990, 68(8) : 4310- 4312.
-
7Wolak E, Ozbay E, Park B G, et al. The design of GaAs/AIAs resonant tunneling diodes with peak current densities over 2 ×10^5 Aem^-2 [J]. J Appl Phys, 1991,69(5) : 3345 - 3350.
-
8Duschl R, Eberl K. Physics and applications of Si/Si Ge/Si resonant interband tunneling diodes [J]. Thin Solid Films,2000, 380:151 - 153.
-
9See P, Paul D J. The scaled performance of Si/Sil-xGex resonant tunneling diodes [J]. IEEE Elec Dew Lett, 2001,22(12) : 582 - 584.
-
10Han P, Sakuraba M, Jeong Y C, et al. Observation of sharp current peaks in resonant tunneling diode with strained Sio.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD [J]. J CrystGrowt, 2000, 209(2): 315-320.
引证文献4
-
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-
2李涛,余志平,王燕,黄雷,向采兰.室温下Si/Si_(1-x)Ge_x共振隧穿二极管的数值模拟[J].Journal of Semiconductors,2006,27(5):869-873.
-
3房丽敏.多势垒结构电流特性的数值分析[J].辽宁科技学院学报,2007,9(1):33-34.
-
4陈培毅,熊晨荣,王燕.硅基隧穿二极管[J].微纳电子技术,2003,40(12):1-6. 被引量：2
-
1王建林,王良臣,曾一平,刘忠立,杨富华,白云霞.Design and Realization of Resonant Tunneling Diodes with New Material Structure[J].Journal of Semiconductors,2005,26(1):1-5. 被引量：1
-
2高金环,杨瑞霞,武一宾,贾科进,商耀辉,张磊,杨克武.InP材料体系RTD的研制[J].电子器件,2007,30(4):1168-1170.
-
3张磊,杨瑞霞,武一宾,商耀辉,高金环.共振隧穿二极管的设计、研制和特性分析[J].Journal of Semiconductors,2007,28(5):737-740.
-
4易里成荣,谢常青,王从舜,刘明,叶甜春.A DBRTD with a High PVCR and a Peak Current Density at Room Temperature[J].Journal of Semiconductors,2005,26(10):1871-1874.
-
5胡留长,郭维廉,张世林,梁惠来.平面型共振隧穿二极管的制作(英文)[J].纳米技术与精密工程,2007,5(3):197-199.
-
6徐毓龙.纳米级隧道效应器件——双电子层隧道晶体管和共振隧道二极管[J].电子产品世界,2001,8(7):53-54. 被引量：1
-
7志伟.松下推出3CCD数码摄像机GS400[J].中国信息化,2004(3):92-92.
-
8韩春林,邹鹏辉,高建峰,薛舫时,张政,耿涛,陈辰.利用空气桥技术实现InP基共振遂穿二极管器件[J].中国电子科学研究院学报,2009,4(5):516-518. 被引量：2
-
9王红培,王广龙,邱鹏,高凤岐,陈建辉.QDRTD单光子探测技术[J].红外与激光工程,2012,41(10):2659-2663. 被引量：4
-
10胡留长,郭维廉,张世林,梁惠来,姚素英.平面型共振隧穿二极管和其组成MOBILE[J].天津大学学报,2006,39(11):1360-1363.
