基于SiGe／Si的空穴型共振隧穿二极管
被引量：4
摘要
用GS400高真空外延设备制备了空穴型双势垒单势阱共振隧道二极管，常温(293K)直流测试数据为PVCR(峰谷电流比)=1．13，Jp(峰值电流)=1．589kA／cm^2，对应的低温(77K)脉冲测试数据为PVCR=1．24，Jp=1．086kA／cm^2，两种情况下，较低的PVCR可归结为Ge2Si1-x／Si异质结构本身的能级特性和热效应。
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引证文献4
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2李涛,余志平,王燕,黄雷,向采兰.室温下Si/Si_(1-x)Ge_x共振隧穿二极管的数值模拟[J].Journal of Semiconductors,2006,27(5):869-873.
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