ALD反应腔分区加热控制

ALD reaction chamber partition heating control

在原子层沉积系统(Atomic layer deposition)ALD的薄膜生长工艺流程中,关键部分在于对工艺腔室内部温度和压强的控制。由于ALD反应腔内部温度控制具有非线性、滞后性及时变性,本文通过对反应腔采取分区加热的方法,使用西门子TIA博途软件自带的具有抗积分饱和功能的PID控制器,加上前馈补偿PID控制算法,很好地解决了反应腔内温度均匀性这一问题。并通过实验实测数据和仿真,得出整个温度控制范围误差控制在5℃‰。

During the atomic layer deposition(ALD) process thin film,the key component is the controlling of temperature and pressure on the reaction chamber.To solve the temperature in the reaction chamber have the characteristics of non-linearity,time variability and large delay of plant controls,we designed the two district heating methods,used the PID controller of software TIA and feed-forward compensation controller.Simulation result illustrate this method is adaptive to the reaction chamber's good temperature homogeneity.In addition,the basic error can reach 5℃‰ referred to output range.