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镓基砷化物、氮化物量子点研究进展

Research and Development of Ga-based Arsenide and Nitride Semiconductor Quantum Dots
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摘要 综述了半导体低维结构以及镓基砷化物、氮化物材料量子点的发展,涉及了外延生长机理、量子点的形貌结构特征,并着重介绍了镓基氮化物材料量子点的制备方法、研究的现状、面临的困难、应用发展现状,并对其未来研究趋势提出了看法。 The development course of low dimensional semiconductor materials and Ga-based nitride, arsenide semiconductor quantum dots are reviewed. Epitaxial growth mechanism and the morphological structure are involved. The device applications, difficulties and current status of group-III nitride semiconductor quantum dots are emphasized. The opinions of the existing problems and research trend for further are given.
作者 曲钢 徐茵 顾彪 秦福文 郎佳红
机构地区 大连理工大学电气工程与应用电子技术系三束材料改性国家重点实验室
出处 《电子元件与材料》 CAS CSCD 北大核心 2004年第1期45-47,共3页 Electronic Components And Materials
基金 国家自然科学基金资助项目(69976008)
关键词 量子点 砷化物 氮化物 制备工艺 quantum dots arsenide nitride preparation methods
分类号 TN304.23 [电子电信—物理电子学]
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电子元件与材料
2004年 第1期

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