期刊文献+

新型悬空结构射频微电感的制作与测试 被引量:2

A New Suspended RF Micro-inductor: Fabrication and Measurement
下载PDF
导出
摘要 利用MEMS(Micro Electro-Mechanical System:微机电系统)工艺中的牺牲层技术制作了一种新型悬空结构微电感,在此悬空结构中,微电感的线圈制作在与衬底平行的平面上,线圈与衬底之间有立柱支撑;此新型微电感的制作工艺流程简单,与集成电路工艺相兼容,且其高频性能较好.并对此结构微电感的性能进行了测试,测试频率范围在0.05~10 GHz之间,结果表明:当悬空结构微电感的悬空高度为20 μm,工作频率在3~5 GHz范围内时,其电感量达到4 nH,其Q值最大可达到22. Presented is a new suspended RF spiral inductor, fabricated by using the sacrifice layer process in the MEMS technology. Great improvements in Q factor and peak Q frequency is achieved because of the separation between substrate and inductor. In fabrication, only conventional thick photo resist lithography and electroplating are used, the fabrication process is simple and IC compatible. The inductance, Q factor were measured respectively using network analyzer from 0.05 to 10 GHz. The measured maximum Q factor is 22 and inductance 4 nH when sustainments hight is 20 mm, range 3~5 GHz.
出处 《电子元件与材料》 CAS CSCD 北大核心 2004年第1期54-56,共3页 Electronic Components And Materials
基金 国防预研基金资助项目(41318.8.1.3)
关键词 微电感 悬空结构 射频 micro-inductors suspended configuration radio frequency
  • 相关文献

参考文献1

二级参考文献8

  • 1P R Gray, R G Meyer. Future directions in silicon IC's for RF personal communications[A]. Proceedings of the IEEE[C]. Berkeley(USA): IEEE, 1995.83 - 90.
  • 2L E Larson. Integrated circuit technology options for RFIC's-Present status and future directions[J]. IEEE J Solid-State Circuits, 1998,33: 387 - 399.
  • 3J N Burghartz, D C Edelstein, M Soyuer, et al. RF circuit design aspects of spiral inductors on silicon [J ]. IEEE J Solid-State Circuits, 1998,33:1440 - 1445.
  • 4C P Yue,C Ryu,J Lau,et al. A physical model for planar spiral inductors on silicon[A]. Proceedings of Int Electron Devices[C]. Stanford(USA): Int Electron Devices Meeting, 1996. 155- 158.
  • 5H M Greenhouse. Design of planar rectangular microelectronic inductors[J ]. IEEE Trans Parts, Hybrids, Packaging, 1974, PHP - 10:101 - 109.
  • 6C P Yue,S S Wong. Physical modeling of spiral inductors on silicon[J]. IEEE Transactions on Electron Devices,2000,47(3) :560 - 568.
  • 7C P Yue, S S Wong. On-chip spiral inductors with patterned ground shields for Si-based RF IC' s[J]. IEEE J Solid- State Circuits, 1998,33: 743 - 752.
  • 8J E Post. Optimizing the design of spiral inductors on silicon[J]. IEEE Transactions on Circuits and SystemsⅡ ,2000,47(1): 15 - 17.

共引文献7

同被引文献24

  • 1赵小林,王西宁,周勇,蔡炳初.双层悬空结构射频微电感制作研究[J].微纳电子技术,2005,42(1):30-32. 被引量:4
  • 2KATEHI L P B, HARVEY J F, HERRICK K J. 3 D Integration of RF circuits using Si micromachining [J].IEEE Microwave Mag, 2001, 2 (1): 30-39.
  • 3RICHARDS R J, DE LOS SANTOS H J. MEMS for RF/Microwave wireless applications: the next wave [J].Microwave J, 2001, (44): 20-41.
  • 4RIBAS R P, LESCOT J, LECLERCQ J L, et al. Micromachined microwave planar spiral inductors and transformers [J].IEEE Trans Microwave Theory Tech, 2000, 48 (8):1326-1335.
  • 5JIANG H, WANG Y, YEH J L A, et al. On-chip spiral inductors suspended over deep copper-lined cavities [J].IEEE Trans Microwave Theory Tech, 2000, 48 (12): 2415-2423.
  • 6HERRICK K J, SCHWARZ T A, KATEHI L P B. Si-micromachined coplanar waveguides for use in high-frequency circuits [J] . IEEE Trans Microwave Theory Tech, 1998, 46(6): 762-768.
  • 7ROBERTSON S V, KATEHI L P B, REBEIZ G M. Micromachined W-band filters [J] . IEEE Trans Microwave Theory Tech, 1996, 44 (4): 598-606.
  • 8YOON J B, KIM B K, HAN C H, et al. Surface micromachined solenoid on-Si and on-glass inductors for RF applications [J] . IEEE Electron Device Lett, 1999, 20 (9): 487-489.
  • 9ROGERS J W M, LEVENETS V, PAWLOWICZ C A, et al.Post-processed Cu inductors with application to a completely integrated 2-GHz VCO [J] . IEEE Trans Electron Devices,2001, 48 (6): 1284-1287.
  • 10ZengJ, Wang C H, Sangster A J. Theoretical and experimental studies offlip-chip assembled high-Q suspended MEMS inductors[J]. IEEE Transaction on Microwave Theory and Techniques, 2007, 55(6): 1171- 1181.

引证文献2

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部