Ce掺杂SrBi_2Nb_2O_9系铋层状压电陶瓷的结构与性能研究

The Structure and Properties of Ce-doping SrBi_2Nb_2O_9 Bismuth Layer-structured Piezoelectric Ceramics

采用传统固相法制备了SrBi2Nb2O9-x mol%Ce(SBN-xCe,0.00≤x≤0.25)系铋层状压电陶瓷,研究了Ce掺杂对SBN系陶瓷的物相、微观结构与电性能的影响。XRD结果表明所有陶瓷样品均为单一铋层状结构相;介电常数温度曲线表明获得样品的居里温度均高于420℃;随着Ce含量的增加,陶瓷的压电性能先升高后降低,同时其机械品质因数Qm得到显著提高。当x=0.15时,样品各项综合性能达到最佳值:压电常数d33=18 pC/N,平面机电耦合系数kp=7.1%,机械品质因数Qm=1056,居里温度Tc=440℃。

Bismuth layer-structured piezoelectric ceramics SBN-xCe(0.00 ≤ x ≤ 0.25)were synthesized by traditional solid state reaction. The effects of Ce addition on the microstructure and electrical properties of ceramics were investigated. XRD results indicated that all samples were single phase. The εr-T curve showed that the Tc of all samples are above 420 ℃. With increasing the content of Ce, the piezoelectric constant d33 firstly increased and then decreased. Meanwhile, the mechanical quality factor Qm was enhanced after Ce doping. When x=0.15, the ceramic achieved an optimum performance: piezoelectric constant d33=18 pC/N, planar electromechanical coupling coefficient kp=7.1%, mechanical quality factor Qm=1056, Curie temperature Tc=440 ℃.