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Plasma induced by pulsed laser and fabrication of silicon nanostructures

Plasma induced by pulsed laser and fabrication of silicon nanostructures
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摘要 It is interesting that in preparing process of nanosilicon by pulsed laser, the periodic diffraction pattern from plasmonic lattice structure in the Purcell cavity due to interaction between plasmons and photons is observed. This kind of plasmonic lattice structure confined in the cavity may be similar to the Wigner crystal structure. Emission manipulation on Si nanostructures fabricated by the plasmonic wave induced from pulsed laser is studied by using photoluminescence spectroscopy.The electronic localized states and surface bonding are characterized by several emission bands peaked near 600nm and 700nm on samples prepared in oxygen or nitrogen environment. The electroluminescence wavelength is measured in the telecom window on silicon film coated by ytterbium. The enhanced emission originates from surface localized states in band gap due to broken symmetry from some bonds on surface bulges produced by plasmonic wave in the cavity. It is interesting that in preparing process of nanosilicon by pulsed laser, the periodic diffraction pattern from plasmonic lattice structure in the Purcell cavity due to interaction between plasmons and photons is observed. This kind of plasmonic lattice structure confined in the cavity may be similar to the Wigner crystal structure. Emission manipulation on Si nanostructures fabricated by the plasmonic wave induced from pulsed laser is studied by using photoluminescence spectroscopy.The electronic localized states and surface bonding are characterized by several emission bands peaked near 600nm and 700nm on samples prepared in oxygen or nitrogen environment. The electroluminescence wavelength is measured in the telecom window on silicon film coated by ytterbium. The enhanced emission originates from surface localized states in band gap due to broken symmetry from some bonds on surface bulges produced by plasmonic wave in the cavity.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期340-345,共6页 中国物理B(英文版)
基金 supported by the National Natural Science Foundation of China(Grant Nos.11264007 and 61465003)
关键词 nanosilicon pulsed laser PLASMON PHOTON nanosilicon,pulsed laser,plasmon,photon
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  • 1Schmidt, Patrick,Berndt, Richard,Vexler, Mikhail I.Ultraviolet light emission from Si in a scanning tunneling microscope. Physical Review . 2007
  • 2Wei-Qi Huang,Rong-Tao Zhang,Hai-Xu Wang,Feng Jin,Li Xu,Shui-Jie Qin,Ke-Yue Wu,Shi-Rong Liu,Cao-Jian Qin.??Laser on porous silicon after oxidation by irradiation and annealing(J)Optics Communications . 2008 (20)
  • 3Brongersma, M.L.,Polman, A.,Min, K.S.,Boer, E.,Tambo, T.,Atwater, H.A.Tuning the emission wavelength of Si nanocrystals in SiO<sub>2</sub> by oxidation. Applied Physics . 1998
  • 4Wei-Qi Huang,Shirong Liu,Zhong-Mei Huang,Xin-Jian Miao,Chao-Jian Qin,Quan Lv.??Nanobulges on surface of silicon film and Si–Yb quantum cascade laser(J)Optics Communications . 2014
  • 5Negro L D,Cazzanellia M,Daldossoa N,Gaburroa Z,Pavesia L,Priolob F,Pacificib D,Franzob G,Iaconac F. PhysicaE . 2003
  • 6Khurana A. Physics Today . 1990
  • 7R L Savio,S L Portalupi,D Gerace,A Shakoor,T F Krauss,L O Faolain,L C Andreani,M Galli.Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities (3 pages). Applied Physics . 2011
  • 8Alima, Dana,Estrin, Yevgeni,Rich, Daniel H.,Bar, Ilana.The structural and optical properties of supercontinuum emitting Si nanocrystals prepared by laser ablation in water. Journal of Applied Physics . 2012
  • 9Wigner E. Transactions of the Faraday Society . 1938
  • 10Walavalkar, Sameer S.,Hofmann, Carrie E.,Homyk, Andrew P.,Henry, M. David,Atwater, Harry A.,Scherer, Axel.Tunable visible and near-IR emission from sub-10 nm etched single-crystal Si nanopillars. Nano Letters . 2010

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