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Charge trapping behavior and its origin in Al_2O_3/SiC MIS system

Charge trapping behavior and its origin in Al_2O_3/SiC MIS system
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摘要 Charge trapping behavior and its origin in Al2O3/SiC MOS structure are investigated by analyzing the capacitance–voltage(C–V) hysteresis and the chemical composition of the interface. The C–V hysteresis is measured as a function of oxide thickness series for an Al2O3/SiC MIS capacitor. The distribution of the trapped charges, extracted from the C–V curves, is found to mainly follow a sheet charge model rather than a bulk charge model. Therefore, the electron injection phenomenon is evaluated by using linear fitting. It is found that most of the trapped charges are not distributed exactly at the interface but are located in the bulk of the Al2O3 layers, especially close to the border. Furthermore, there is no detectable oxide interface layer in the x-ray photoelectron spectroscope(XPS) and transmission electron microscope(TEM)measurements. In addition, Rutherford back scattering(RBS) analysis shows that the width of the Al2O3/SiC interface is less than 1 nm. It could be concluded that the charge trapping sites in Al2O3/SiC structure might mainly originate from the border traps in Al2O3 film rather than the interface traps in the interfacial transition layer. Charge trapping behavior and its origin in Al2O3/SiC MOS structure are investigated by analyzing the capacitance–voltage(C–V) hysteresis and the chemical composition of the interface. The C–V hysteresis is measured as a function of oxide thickness series for an Al2O3/SiC MIS capacitor. The distribution of the trapped charges, extracted from the C–V curves, is found to mainly follow a sheet charge model rather than a bulk charge model. Therefore, the electron injection phenomenon is evaluated by using linear fitting. It is found that most of the trapped charges are not distributed exactly at the interface but are located in the bulk of the Al2O3 layers, especially close to the border. Furthermore, there is no detectable oxide interface layer in the x-ray photoelectron spectroscope(XPS) and transmission electron microscope(TEM)measurements. In addition, Rutherford back scattering(RBS) analysis shows that the width of the Al2O3/SiC interface is less than 1 nm. It could be concluded that the charge trapping sites in Al2O3/SiC structure might mainly originate from the border traps in Al2O3 film rather than the interface traps in the interfacial transition layer.
作者 刘新宇 王弋宇 彭朝阳 李诚瞻 吴佳 白云 汤益丹 刘可安 申华军
机构地区 Microwave Device and IC Department Zhuzhou CSR Times Electric Co.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第8期523-528,共6页 中国物理B（英文版）
基金 supported by the National Natural Science Foundation of China(Grant No.61106080) the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2013ZX02305)
关键词 AL2O3 Si C charge trapping sites INTERFACE Al2O3,Si C,charge trapping sites,interface
分类号 O469 [理学—凝聚态物理]
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参考文献36

  • 1Tanner, Carey M.,Perng, Ya-Chuan,Frewin, Christopher,Saddow, Stephen E.,Chang, Jane P.Electrical performance of Al 2 O 3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Applied Physics . 2007
  • 2Avice, M.,Diplas, S.,Th?gersen, A.,Christensen, J. S.,Grossner, U.,Svensson, B. G.,Nilsen, O.,Fjellvag, H.,Watts, J. F.Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures. Applied Physics . 2007
  • 3Lazar, H.R.,Misra, V.,Johnson, R.S.,Lucovsky, G.Characteristics of metalorganic remote plasma chemical vapor deposited Al<sub>2</sub>O<sub>3</sub> gate stacks on SiC metal-oxide-semiconductor devices. Applied Physics . 2001
  • 4Noborio, Masato,Grieb, Michael,Bauer, Anton J.,Peters, Dethard,Friedrichs, Peter,Suda, Jun,Kimoto, Tsunenobu.Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices. Japanese Journal of Applied Physics . 2011
  • 5Rozen, John,Ahyi, Ayayi C.,Zhu, Xingguang,Williams, John R.,Feldman, Leonard C.Scaling between channel mobility and interface state density in SiC MOSFETs. IEEE Transactions on Electron Devices . 2011
  • 6Chung, G.Y.,Tin, C.C.,Williams, J.R.,McDonald, K.,Chanana, R.K.,Weller, R.A.,Pantelides, S.T.,Feldman, L.C.,Holland, O.W.,Das, M.K.,Palmour, J.W.Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Letters . 2001
  • 7Lu, Chao-Yang,Cooper Jr., James A.,Tsuji, Takashi,Chung, Gilyong,Williams, John R.,McDonald, Kyle,Feldman, Leonard C.Effect of process variations and ambient temperature on electron mobility at the SiO 2 /4H-SiC interface. IEEE Transactions on Electron Devices . 2003
  • 8Dhar, S.,Song, Y.W.,Feldman, L.C.,Isaacs-Smith, T.,Tin, C.C.,Williams, J.R.,Chung, G.,Nishimura, T.,Starodub, D.,Gustafsson, T.,Garfunkel, E.Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H-SiC at the oxide/(1120) 4H-SiC interface. Applied Physics . 2004
  • 9McDonald, K.,Weller, R.A.,Pantelides, S.T.,Feldman, L.C.,Chung, G.Y.,Tin, C.C.,Williams, J.R.Characterization and modeling of the nitrogen passivation of interface traps in SiO 2 /4H-SiC. Journal of Applied Physics . 2003
  • 10M.D. Groner,J.W. Elam,F.H. Fabreguette,S.M. George.??Electrical characterization of thin Al 2 O 3 films grown by atomic layer deposition on silicon and various metal substrates(J)Thin Solid Films . 2002 (1)

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Chinese Physics B
2015年 第8期

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