摘要
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
作者
Zeng Liu
Pei-Gang Li
Yu-Song Zhi
Xiao-Long Wang
Xu-Long Chu
Wei-Hua Tang
刘增;李培刚;支钰崧;王小龙;褚旭龙;唐为华(Laboratory of Information Functional Materials and Devices,School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;China Aerospace Academy of Systems Science and Engineering,Beijing 100048,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)
the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
