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Pressure-mediated contact quality improvement between monolayer MoS_2 and graphite

Pressure-mediated contact quality improvement between monolayer MoS_2 and graphite
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摘要 Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications. Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications.
作者 廖梦舟 杜罗军 张婷婷 谷林 姚裕贵 杨蓉 时东霞 张广宇 Mengzhou Liao;Luojun Du;Tingting Zhang;Lin Gu;Yugui Yao;Rong Yang;Dongxia Shi;Guangyu Zhang
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第1期178-182,共5页 中国物理B(英文版)
基金 Project supported by the National Key R&D Program,China(Grant No.2016YFA0300904) the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH004) the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant Nos.XDPB06 and XDB07010100) the National Natural Science Foundation of China(Grant Nos.61734001 and 51572289)
关键词 MoS2/graphite HETEROJUNCTION C-AFM PRESSURE CONTACT quality MoS_2/graphite heterojunction C-AFM pressure contact quality
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