摘要
Tin sulfide quantum dots(SnS_2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS_2 QDs are complicated and require a high temperature and high pressure environments; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS_2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green,and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS_2 QDs are studied. The synthesized SnS_2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS_2 QDs is fabricated and its J–V and C–V characteristics are also studied. The detector responds under λ = 365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS_2 QDs in photodetectors.
Tin sulfide quantum dots(SnS_2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS_2 QDs are complicated and require a high temperature and high pressure environments; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS_2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green,and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS_2 QDs are studied. The synthesized SnS_2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS_2 QDs is fabricated and its J–V and C–V characteristics are also studied. The detector responds under λ = 365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS_2 QDs in photodetectors.
作者
Yao Li
Libin Tang
Rujie Li
Jinzhong Xiang
Kar Seng Teng
Shu Ping Lau
李尧;唐利斌;李汝劼;项金钟;Kar Seng Teng;刘树平(School of Materials Science and Engineering,Yunnan University,Kunming 650091,China;Kunming Institute of Physics,Kunming 650223,China;School of Physics,Beijing Institute of Technology,Beijing 100081,China;College of Engineering,Swansea University,Bay Campus,Fabian Way,Swansea SA18EN,United Kingdom;Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China)
基金
supported by the Equipment Pre-research Fund under the Equipment Development Department(EDD)of China’s Central Military Commission(CMC)(Grant No.1422030209)
the Innovation Team Program of China North Industries Group Corporation Limited(NORINCO)Group(Grant No.2017CX024)
the National Natural Science Foundation of China(Grant Nos.61106098 and 11864044)
