摘要
Developing highly accurate critical dimension standards is a significant task for nanoscale metrology. In this paper, we put forward an alternative approach to fabricate amorphous Si critical dimension structures with direct Si lattice calibration in the same frame scanning transmission electron microscopy image. Based on the traceable measurement analysis, the optimized method can provide the same calibration accuracy and increase the fabrication throughput and lower the cost simultaneously, which benefits the application needs in atomic force microscopy(AFM) tip geometry characterization,benchmarking measurement tools, and conducting comparison measurements between different approaches.
Developing highly accurate critical dimension standards is a significant task for nanoscale metrology. In this paper, we put forward an alternative approach to fabricate amorphous Si critical dimension structures with direct Si lattice calibration in the same frame scanning transmission electron microscopy image. Based on the traceable measurement analysis, the optimized method can provide the same calibration accuracy and increase the fabrication throughput and lower the cost simultaneously, which benefits the application needs in atomic force microscopy(AFM) tip geometry characterization,benchmarking measurement tools, and conducting comparison measurements between different approaches.
基金
supported by the National Key Scientific Instrument and Equipment Development Projects of China(Grant No.2014YQ090709)
the National Key Research and Development Program of China(Grant No.2016YFA0200902)
Major Projects of Science and Technology Commission of Shanghai,China(Grant No.17JC1400800)
