摘要
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.
作者
Jin-Ming Shang
Jian Feng
Cheng-Ao Yang
Sheng-Wen Xie
Yi Zhang
Cun-Zhu Tong
Yu Zhang
Zhi-Chuan Niu
尚金铭;冯健;杨成奥;谢圣文;张一;佟存柱;张宇;牛智川(State Key Laboratory for Superlattice and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,china;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)
基金
supported by the Major Program of the National Natural Science Foundation of China(Grant Nos.61790581,61790582,and 61790584)
the National Natural Science Foundation of China(Grant No.61435012)
the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
