利用原子力显微镜研究晶体缺陷

Researching crystal defects with atomic force microscope

首次利用原子力显微镜研究晶体表面缺陷,给出了经腐蚀后的KTiOAsO4晶体表面铁电畴和位错蚀坑的清晰照片和定量信息。对实验结果和方法进行了讨论,指出这种实验方法具有放大倍数高,分辨率可达原子量级,可以给出物质表面结构的定量信息和立体图像等特点,并且具体探讨了利用原子力显微镜研究晶体表面缺陷的一些实验技术问题。

The crystal defects have been researched firstly with atomic force microscope, which gives clear pictures and quantitative information of ferroelectrics domain and etch pits of dislocation on etched KTiOAsO_4 crystal surface. The work has been discussed systematically in this paper. It shows that the method has many advantages, for example, having good magnifying power and resolving power,and offering the quantitative information and stereoscopic pictures of sample surface. Some experimental techniques are also discussed in details.