CuInS_2/ZnS/ZnS量子点的制备与光电性能研究

Preparation and Photoelectric Properties of CuInS_2/ZnS/ZnS Quantum Dots

首先以高温一锅煮法合成了CuInS_2核量子点,再通过连续和长时间的包覆ZnS外壳,制备出了量子产率高达76%的厚壳结构CuInS_2/ZnS/ZnS,将CuInS_2/ZnS/ZnS量子点作为发光层,利用简单的溶液处理法工艺成功制备出CuInS_2基量子点发光二极管(QLEDs)。同时对量子点的结构、形貌和光学性能及CuInS_2基QLEDs的光电性能进行表征和分析,研究结果表明,通过延长高温反应时间在CuInS_2核上包覆ZnS外壳,能够合成具有良好的光致发光性能的CuInS_2/ZnS/ZnS量子点,利用溶液法制备的CuInS_2基QLEDs开启电压值仅为2.5 V,并且其发光亮度能够达到5473 cd/m^2。CuInS_2/ZnS/ZnS的光致发光和电致发光性能都有了很大的提升。

CuInS2-based quantum dots light-emitting diodes(QLEDs) were fabricated in three major steps.First,the CuInS2 nuclear quantum-dots(QDs) were synthesized by one-pot reaction,next,the CuInS2 QDs were uniformly covered with double thick ZnS shells grown one after another via chemical route under different growth conditions;and finally,QLEDs were fabricated with the CuInS2/ZnS/ZnS QDs spin-coated on pre-patterned ITO substrate and used as the light-emission layer.The nanostructures/optical properties of CuInS2/ZnS/ZnS QDs and photoelectric properties of QLEDs were characterized with X-ray diffraction photoluminescence spectroscopy and transmission electron microscopy.The results show that high quality QDs and QLEDs can be synthesized and fabricated bottom-up via chemical route.To be specific,the CuInS2/ZnS/ZnS QDs had improved photoluminescence and electroluminescence properties and a quantum yield of^76%;the onset voltage and luminance of QLEDs were 2.5 V and 5473 cd/m2,respectively.