射频溅射功率对室温沉积AZO薄膜性能的影响

Effect of RF sputtering power on properties of AZO thin films deposited at room temperature

本文采用直流射频耦合磁控溅射技术,在玻璃基底上室温沉积AZO薄膜,将射频电源功率从0W增加到到200W。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外分光光度计、霍尔效应测试系统重点研究了AZO薄膜的晶体结构、表面形貌、光学性能和电学性能。研究结果表明,直流射频耦合磁控溅射可以在室温下制备性能优异的AZO薄膜,且射频溅射功率对AZO薄膜光电性能有显著的影响,随着射频功率的提高,AZO薄膜致密性增加,粒子逐渐变大,薄膜表面形貌和生长形态发生一定变化。在射频功率为200W时,室温制备的AZO薄膜电阻率达到最低5.39×10^(-4)Ω·cm,薄膜平均可见光透过率达到82.6%。

The Al-doped ZnO(AZO) thin films were deposited by DC-RF coupled magnetron sputtering system on glass substrates at room temperature. The RF sputtering power increased from 0 to 200 W. The structure, surface morphology, optical and electrical properties of the AZO films were investigated by using X-ray diffractometer, scanning electronic microscope,ultraviolet-visible spectrophotometer and hall effect test system as a function of different RF sputtering power, respectively. The results indicate that AZO thin films with excellent performance can be prepared by DC-RF coupled magnetron sputtering at room temperature. Meanwhile, the RF sputtering power has a significant impact on the optical and electrical properties of the AZO thin films. With the increase of RF sputtering power, the compactness of AZO films and the grains size were increased, the surface morphology and growth form of the AZO films change greatly. Under RF sputtering power of 200 W, the lowest resistivity of the AZO film is 5.39 ×10-4Ω·cm. The average optical transmittance of the AZO film prepared at room temperature is approximately82.6% in the visible wavelength.