利用加速器质谱学中的入射离子X射线方法测定^(79)Se的半衰期

Half-life measurement of ^(79)Se with projectile X-ray method in AMS

利用加速器质谱学中的入射离子X射线方法(PX-AMS)对79Se的半衰期进行了测定。用这一直接测量79Se原子数的方法得到新的79Se半衰期为(2.80±0.36)×10~5a。利用同样的方法也测定了75Se的半衰期,75Se半衰期的测定结果显示利用PX-AMS方法对79Se半衰期的测定结果是可靠的。

The half-life of 79Se has been measured using the projectile X-ray method in AMS (PX-AMS). A new half-life of 79Se, (2.80±0.36) ×10~5a is obtained with the direct measurement method. The half-life of 75Se is also obtained with the same method as that of 79Se. The measurement result of 75Se half-life shows that the result of 79Se half-life obtained with the PX-AMS method is reliable.