1200V/75A IGBT与FRD芯片在功率模块中的性能优化

Optimization of 1200 V/75 A Fast Recovery Diode Matched With IGBT Performance in the Power Module

介绍绝缘栅双极型晶体管(insulated-gate bipolar transistors,IGBT)与快恢复二极管(fast recovery diode,FRD)匹配技术的特点和优势、应用前景及发展趋势。为更好地研究IGBT和FRD芯片在功率模块内的使用状况,结合国网智能电网研究院自主开发的1 200 V/75 A的IGBT和FRD芯片,得到相关的特性参数。将它们封装成功率模块,提出优化IGBT与FRD在功率模块中性能匹配优化的几种方法。

This paper introduced the features, advantages, application prospect and development trend of fast recovery diode(FRD) matched with insulated-gate bipolar transistors(IGBT) technologies. In order to research service conditions of IGBT and FRD chips in the power module better, adopting the 1 200 V/75 A IGBT and FRD chips which were researched independently by the State Grid Smart Grid Research Institute, technical performance parameters were gotten. This paper packaged these chips into power module, and put forward several optimizing methods of FRD matched with IGBT technologies.