摘要
浸没式光刻通过高折射率的液体充入透镜底部和片子之间的空间使光学系统的数值孔径具有显著的优势。在193nm曝光系统中,水(折射率为1.44)被选作最佳的浸入液体。通过成像模拟,现已证明ArF穴193nm雪浸没式光刻(NA=1.05～1.23)与F2穴157nm雪干法穴NA=0.85～0.93雪光刻具有几乎相同的成像性能。结合流体力学和热模拟结果,讨论了ArF浸没式曝光设备的优势和可行性。
Immersion lithography has advantage in the numerical aperture of optics by a factor of refractive index n of the liquid filled into the space between the bottom lens and wafer.In case of193nm exposure tools,water(n=1.44)has been found as the best liquid.It is shown,by using imaging simulations,that ArF(193nm)immersion lithography(NA=1.05to1.23)has almost equivalent performance to F 2 (157nm)dry(NA=0.85to0.93)lithography.Issues in the ArF immersion exposure tools are discussed with fluid-dynamic and thermal simulations results
出处
《电子工业专用设备》
2004年第2期10-14,18,共6页
Equipment for Electronic Products Manufacturing
关键词
193nm光刻
浸没透镜曝光
折射率
数值孔径
nm lithography
Immersion exposure
Index of refraction
Numerical aperture
