混合应变量子阱SOA的增益特性

Gain chractristics of mix strained quantum well SOAs

报道了基于混合应变多量子阱有源材料的半导体光放大器及其增益特性.引入张应变量子阱的SOA器件,增益带宽约为50nm,偏振相关损耗小于1dB,峰值增益随偏置电流增大蓝移.在高偏置条件下,芯片剩余反射和外腔反馈引起的受激发射造成增益带谱收缩,增益下降.高性能SOA必须克服芯片剩余反射和抑制外腔反馈.

Semiconductor optical amplifier with mix strained quantum well active material and its gain performance are reported. The device with about 50nm gain spectrum width and less than 1dB polarization dependent loss due to tensile strained quantum wells has been proposed. It is clear from experiment that the maximum gain shifts to blue as the bias current increases. Gain spectrum shrinks and gain decreases under very high bias current conditions due to feedback by external cavity and residual chip reflection. It is necessary for SOA with high performance to suppress both of residual reflectivity of the chip and feedback from external cavity.