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蓝光LED之父中村修二:小人物的大奇迹 被引量:3

Shuji Nakamura, the Father of the Blue LED: The Great Victory of a Humble Man
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摘要 中村修二被公认为当代电子工程学领域的权威专家之一。中村修二出生于日本一个普通的农村家庭,硕士毕业后在日亚化学公司工作。他在极端艰苦的环境下独立研究,花了6年时间攻克了蓝光LED开发领域中的若干难题,为实现其产业化做出了巨大贡献。然而,中村修二与日亚化学之间因为专利收入的分配问题产生分歧,随后移民美国担任加州大学圣芭芭拉分校的教授,并且获得2014年的诺贝尔物理学奖。考察这样一位经历丰富、特立独行的科学家,有助于揭示体制、社会与科学家之间的复杂关系。 Shuji Nakamura is unanimously regarded as one of the greatest contemporary experts in the field of electronic engineering.He was born in a humble Japanese rural family,and worked in Nichia Corporation after attaining his master’s degree.Shuji Nakamura did his independent research under very harsh conditions,and spent 6 years successfully solving the problems occurred in the invention and industrialization of the blue LED.Afterwards,he broke up with Nichia Corporation,moved to the US,became a professor at the University of California and was awarded the Nobel Prize in Physics in 2014.This paper is intended to reveal the complicated correlation between the academic mechanism,society and scientists through the prism of the unique and rich life of Shuji Nakamura.
作者 沈楠 徐飞 SHEN Nan;XU Fei(Department of Philosophy of Science and Technology,University of Science and Technology of China,Hefei,Anhui,230026;School of Foreign Languages,Anhui Agricultural University,Hefei,Anhui,230036)
出处 《自然辩证法通讯》 CSSCI 北大核心 2019年第6期118-126,共9页 Journal of Dialectics of Nature
基金 国家自然科学基金资助项目"杰出科学家的管理研究"(项目编号:71874170)
关键词 中村修二 蓝光LED 氮化镓 科技创新 Shuji Nakamura Blue LED GaN Technological innovation
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  • 1Amano H, Sawaki N, Akasaki I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an A1N buffer layer Appl Phys Lett, 1986, 48:353-355.
  • 2Amano H, Kito M, Hiramatsu K, et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) Jpn J Appl Phys, 1989, 28:L2112-L2114.
  • 3Nakamura, Senoh M, Mukai T. Highly p-type Mg-doped films grown with GaN buffer layers. Jpn J Appl Phys, 1991, 30:L1708-L1711.
  • 4Nakamura S, Senoh M, Iwasa N, et al. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures Jpn J Appl Phys, 1995, 34:L797-L799.
  • 5Amano H, Kito M, Hiramatsu K, et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn J Appl Phys, 1989, 28:L2112-L2114.
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  • 7Nakamura S, Iwasa N, Senoh M, et al. Highly p-typed Mg-doped GaN films grown with GaN buffer layers. Jpn J Appl Phys, 1991, 30: L1708-L1711.
  • 8Nakamura S, lwasa N, Senoh M, et al. Thermal annealing effects on p-type Mg-doped GaN films. Jpn J Appl Phys, 1991, 31:L139-L142.
  • 9Nakamura S, Senoh M, Iwasa N, et al. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn J Appl Phys, 1995, 34:L797-L799.
  • 10Nakamura S, Senoh M, Nagahama S, et al. InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets. Jpn J Appl Phys, 1996, 35:L217-L220.

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