半导体芯片紫外荧光无损检测

Ultra-violet Fluorescence Nondestructive Detective on Semiconductor Chips

Fe、Na、Ni等金属杂质对半导体器件芯片有严重的负面影响,往往导致器件失效,成品率下降,必须进行有效控制处理。采用紫外荧光(UVF)法可有效检测出硅晶片及半导体器件芯片(如GaP、GaAs等)的金属杂质沾污情况,还能检测金属杂质的相对沾污量,对半导体器件芯片的生产可实现实时非破坏性的检测分析。

The contamination of metal impurities, such as Fe, Na, Ni, will do grave harm to the fabrication of semiconductor devices. It always result in the failure of the devices and low down the yield, care must be taken to deal with it. In this work, the method of Ultra-violet fluorescence (UVF) was adopted to analyse the impurities contamination on the silicon wafers and semiconductor chips (GaP, GaAs. et al.), and the relative amount of contamination also can be detected by UVF. The method of UVF is a real-time nondestructive analysis method to the manufacture of the semiconductor device.