反应溅射TiO_(2-x)N_x膜的可见光吸收性能

Absorption property in visible region of TiO_2-xN_x films prepared by reactive sputtering

用中频交流反应磁控溅射方法制备了N掺杂的TiO2薄膜.利用光电子能谱(XPS)对薄膜的成分进行了分析,并研究了薄膜的可见光吸收性能.结果表明:反应气体中N2的质量分数是影响薄膜中Ti-N键的主要因素;在N2气氛中380℃退火有利于提高N掺杂的含量;厚度的增加使薄膜的吸收性能在紫外到可见光区都有提高;含N量为1.5％的TiO2-xNx薄膜吸收限由TiO2薄膜的387 nm红移至441 nm.

N-doped TiO2 films were prepared by mid-frequency alternative reactive magnetron sputtering. The N concentration of the TiO2-xNx films was analyzed by XPS. And the absorption properties of the films in visible region were investigated. The results show that the mass fraction of Ng in reactive gases is a key variable in influencing the concentration of Ti-N bond in TiO2-xNx films. Annealing TiO2-x film in nitrogen atmosphere at 380°C is favorable for increasing its atomic concentration of nitrogen. The increase of the thickness of TiO2-x films can enhance the absorbability of the TiO2-x films. The wavelength of the absorption edge for TiO2-x film with 1.5% nitrogen has a obvious redshift from 387 nm to 441 nm.