超大规模集成电路中的电沉积铜

Copper Electrodeposition in ULSI

利用铜代替铝作为超大规模集成电路的互连接线 ,代表了半导体工业的重要转变。铜电沉积是互连“大马士革”( Damascene)工艺中最为重要的技术之一。综述了铜在芯片微刻槽中电沉积填充的过程、机理 ,并着重讨论了实现无裂缝和无空洞理想填充的主要因素—镀液的组成和添加剂的影响。

Shift from Al to Cu interconnects in Ultra-Large Scale Integrate (ULSI) is important for semiconductor industry. Cu electrodeposition is one of the most important technologies in the Damascene fabrication of interconnects. The procedure and mechanism of copper filling in the trench of the chip are reviewed, the effect of electrolyte components and additives on superfilling are discussed.