摘要
采用独特的快速循环纳米晶化技术,对直流磁控溅射制备的非晶CoNbZr软磁膜,进行纳米晶化。研究了在不同的纳米晶化工艺条件下,薄膜的微观结构和阻抗性能。CoNbZr软磁薄膜晶粒细化到30nm,阻抗值从20Ω增加到100Ω(1400MHz),阻抗共振峰向低频移动200MHz左右,极大改善了薄膜的软磁性能。
In this paper, the rapid recurrent nanocrystalline technology was used to nanocrystalline amorphous CoNbZr thin films under different conditions. The CoNbZr thin films was fabricated by DC magnetron sputtering. The grain size of the CoNbZr thin films has been fined to 30nm, the impedance increased form 20Ω to 100Ω(1400MHz), the resonance peak of impedance moved to low frequency about 200MHz, the great improvement of soft magnetic film properties were obtained.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2004年第1期46-48,共3页
Journal of Functional Materials
基金
国家重大基础研究发展计划(973计划)资助项目(51310Z05 1)
