等离子体状态对PECVDSiC薄膜微结构的影响

Influence of the gas parameters on the structure of β-SiC films synthesized by PECVD

在PECVD法制备SiC薄膜过程中,深入研究了工作气压及工作气体中氢稀释比例对薄膜的影响,发现以上两个参数是通过共同调整等离子体状态的两个主要参数———等离子体成分及离子能量来起作用的。在此基础上,讨论了等离子体状态在SiC薄膜微结构从非晶转化为纳米晶过程中的作用,发现可以通过控制等离子体成分及离子能量来得到可用于场发射阴极的纳米晶SiC薄膜。

In the work, the cubic phase SiC (β-SiC) films were synthesized by plasma-enhanced chemical vapor deposition (PECVD) and they were investigated by fourier transform infrared spectroscopy and X-ray diffraction meter. The results indicated that the work pressure and H_2 concentration play important roles in the process of growing the films and greatly affect their structure. Simultaneously,it was analyzed that the pressure and H_2 concentration influence on formation of β-SiC films.