栅氧化层击穿的统一逾渗模型

A unified percolation model for gate oxide breakdown

综合E模型和1/E模型中两种不同的缺陷产生机制和逾渗理论,建立了栅氧化层击穿过程中缺陷产生和击穿触发的统一逾渗模型.该模型认为栅氧化层的击穿触发是由于氧化层中氧空位等缺陷所形成的定域态扩展化的结果,并对氧空位等缺陷的产生动力学进行了统一的描述,使得该模型无论在高场强还是低场强情况下所得的结果,均能较好地描述氧化层击穿过程,从而对长期以来有关栅氧化层击穿的E模型和1/E模型之争做出了较为合理的解释.

Based on the Percolation theory and defects creation mechanisms of both E model and 1/E model, a unified percolation model for gate oxide breakdown is brought forward. The trigging mechanism of gate oxide breakdown is believed to be the extending of the localized states induced by the defects such as oxygen vacancy in an oxide. The defect creation dynamics such as oxygen vacancy is described synthetically. As a result, the results of this model both in a high electric field and in a low electric field fit well with the experimental data. So, the long-existing dispute between 1/E and E models is settled.