摘要
用电子探针和能谱仪对电热元件用陶瓷发热材料碳化硅(SiC)使用后不同部位的组织和成分进行了对比分析。对使用200h热端SiC晶粒表面形貌进行了观察,发现在气孔较大处有晶须长出,晶须的主要成分为SiO2。对SiC颗粒尺寸进行了测量,发现其大小符合正态分布。
5The analysis of SiC exothermic material structure was made by EPMA and the composition was measured by EDX. The surface morphology of hot side of SiC was observed after using 200 hours. The results show there are dehiscences of grain and crystal whiskers in bigger pores. The main composition of crystal whisker is SiO_2. A normal distribution of SiC grains was found.
出处
《机械工程材料》
CAS
CSCD
北大核心
2004年第2期10-12,共3页
Materials For Mechanical Engineering
基金
山东省自然科学基金资助项目(Y2001F11)
关键词
陶瓷
微观结构
抗热震性
碳化硅
ceramic
microstructure
thermal shock resistance
SiC
